Mitsubishi announced the development of a new version of its 2.0-kV IGBT module in an LV100 package intended specifically for photovoltaic applications. The power module, which fills the gap between 1 ...
LEIDEN, Netherlands--(BUSINESS WIRE)--IXYS Corporation (NASDAQ: IXYS), a leader in power semiconductors and HVIC technologies for energy efficient products used in power conversion, motor control, ...
New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...
1SP0635 SCALE-2 Plug-and-Play drivers safely and reliably drive 130 x 140 mm and 190 x 140 mm high-voltage and high-power IGBT modules ranging from 1200 V to 3300 V. They are optimised for use in high ...
Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...
Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a new family of plug-and-play gate drivers for 62 mm silicon ...
Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called ...
Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif. — Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage ...
Power Integrations has announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V. With enhanced protection features to ...
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