Advanced Defect Inspection Techniques For nFET And pFET Defectivity At 7nm Gate Poly Removal Process
During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain ...
Experts at the Table: Semiconductor Engineering sat down to talk about how to inspect and measure smaller features across large areas in advanced packaging, with Frank Chen, director of applications ...
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