Abstract: Gallium nitride (GaN) transistors enable efficient and compact high-voltage power converters. In the state-of-the-art enhancement mode GaN-on-Si technology, a 650-V power transistor is ...
Abstract: By deploying a surface reinforcement layer (SRL) at the interface between Schottky metal and p-GaN in the gate stack, a p-GaN gate high-electron-mobility transistor (HEMT) with enhanced gate ...
Abstract: There is a widely-spread claim that GANs are difficult to train, and GAN architectures in the literature are littered with empirical tricks. We provide evidence against this claim and build ...
Prince Henry’s Institute of Medical Research, Department of Obstetrics and Gynaecology, Monash University, and Monash IVF Clayton, Victoria, 3168, Australia * To whom correspondence should be ...
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